參數資料
型號: MGSF3454XT1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
中文描述: 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數: 3/6頁
文件大小: 125K
代理商: MGSF3454XT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
1
2
3
4
0
4
8
12
20
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
ID
0
1
2
3
4
0
4
8
12
ID
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0
4
8
12
16
20
0
0.04
0.08
0.12
R
ID, DRAIN CURRENT (A)
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
Figure 5. Gate Charge
TJ = –55
°
C
25
°
C
125
°
C
16
3 V
5 V
4 V
16
20
5
6
0.16
0.20
VGS = 4.5 V
R
(
–50
0.75
1.00
1.25
1.50
TJ, JUNCTION TEMPERATURE (
°
C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 4.2 A
1.75
125
VGS = 10, 9, 8, 7, 6V
VGS = 10 V
Figure 6. On–Resistance vs. Junction Temperature
6
12
18
VDS – DRAIN–TO–SOURCE VOLTAGE (V)
C
Ciss
Coss
Crss
24
30
V
0
Qg, TOTAL GATE CHARGE (nC)
1.5
3.0
4.5
6.0
9.0
VDS = 15 V
ID = 4.2 A
0
10
8
6
4
2
7.5
0
0
80
160
240
320
400
480
560
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