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參數(shù)資料
| 型號： | MGW20N120 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 28 A, 1200 V, N-CHANNEL IGBT, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MGW20N120 |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 160
J/A typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Robust High Voltage Termination
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
1200
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
28
20
56
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
174
1.39
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
0.7
35
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGW20N120/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
20 A @ 90
°
C
28 A @ 25
°
C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
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