- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379319 > MGW20N120 (ON SEMICONDUCTOR) Insulated Gate Bipolar Transistor PDF資料下載
參數(shù)資料
| 型號： | MGW20N120 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 28 A, 1200 V, N-CHANNEL IGBT, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MGW20N120 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
μ
Adc)
Temperature Coefficient (Positive)
BVCES
1200
—
—
870
—
—
Vdc
mV/
°
C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
BVECS
ICES
25
—
—
Vdc
—
—
—
—
100
2500
μ
Adc
IGES
—
—
250
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
—
—
—
3.00
2.36
2.90
3.54
—
4.99
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
gfe
—
12
—
Mhos
Input Capacitance
f = 1.0 MHz)
Cies
Coes
Cres
—
1860
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
—
122
—
Transfer Capacitance
—
29
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
—
88
—
ns
Rise Time
(VCC = 720 Vdc, IC = 20 Adc,
RG = 20
,
TJ = 25
°
C)
—
103
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
—
190
—
Fall Time
—
284
—
Turn–Off Switching Loss
—
1.65
3.75
mJ
Turn–On Delay Time
Energy losses include “tail”
—
83
—
ns
Rise Time
(VCC = 720 Vdc, IC = 20 Adc,
,
°
RG = 20
TJ = 125
C)
—
107
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
td(off)
tf
Eoff
QT
Q1
Q2
—
216
—
Fall Time
H
—
494
—
Turn–Off Switching Loss
—
3.19
—
mJ
Gate Charge
VGE = 15 Vdc)
—
62
—
nC
(VCC = 720 Vdc, IC = 20 Adc,
—
21
—
—
25
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MHL19338 | PCS BAND RF LINEAR LDMOS AMPLIFIER |
| MHPA18010 | ROTARY SWITCH, T0-1-15402/E; Poles, No. of:2; Current rating:20A; Depth, external:87mm; IP rating:IP65; Length / Height, external:48mm; Temp, op. max:40(degree C); Temp, op. min:-25(degree C); Voltage, working:220V; Width, RoHS Compliant: NA |
| MHPM6B15E60D3 | Hybrid Power Module |
| MHPM6B2A60D | DIODE ZENER 150MW 4.7V 0603 |
| MHPM6B10A60D | M39012 MIL RF CONNECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGW20N60D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGW21N60ED | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
| MGW301205 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@2.5A,-5@2.5A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin 制造商:Cosel Usa Inc 功能描述:MG W30 Series 25 W Dual Output +/-5 V 10 V DC/DC Power Supply |
| MGW301205-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin |
| MGW301212 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@1.25A,-12@1.25A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 30 W Dual Output 12 or 24 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 1.25A 30W 6-Pin |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。