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參數(shù)資料
| 型號(hào)： | MH28S72PJG-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPSE07; No. of Contacts:19; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| 中文描述： | 9663676416位（134217728 - Word的72位）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 5/57頁 |
| 文件大?。?/td> | 954K |
| 代理商： | MH28S72PJG-6 |
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9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH28S72PJG -5,-6,-7
27/Mar. /2001
MIT-DS-406-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
5
BASIC FUNCTIONS
The MH28S72PJG provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge.
In addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
Read(READ) [/RAS =H,/CAS =L, /WE =H]
Write(WRITE) [/RAS =H, /CAS = /WE =L]
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
ACT command activates a row in an idle bank indicated by BA.
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,
READA
).
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank is
deactivated after the burst write(auto-precharge,
WRITEA
).
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all,
PREA
).
REFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
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| MH2M365CNXJ-5 | HYPER PAGE MODE 75497472-BIT ( 2097152-WORD BY 36-BIT ) DYNAMIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH28S72PJG-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH28TAD | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
| MH28TAD-R | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
| MH28TAG | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
| MH28TAG-R | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
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