參數(shù)資料
型號： MH32S72QJA-7
廠商： Mitsubishi Electric Corporation
英文描述： 2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
中文描述： 2415919104位（33554432 - Word的72位）同步動態(tài)隨機(jī)存儲器
文件頁數(shù)： 15/56頁
文件大?。?/td> 917K
代理商： MH32S72QJA-7
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-7, -8
17/Mar./2000
MIT-DS-0371-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
15
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
Limits
Min. Max.
2.4
Unit
VOH(DC) High-Level Output Voltage(DC) IOH=-2mA
VOL(DC) Low-Level Output Voltage(DC) IOL=2mA
IOZ
Off-stare Output Current
Ii
Input Current
V
V
0.4
10
10
Q floating VO=0 ~ Vdd
VIH=0 ~ Vdd+0.3V
-10
-10
uA
uA
Note)
1:Icc(max) is specified at the output open condition.
1910
236
218
650
470
2180
3080
236
740
560
-7,-8
Test Condition
Limits
(max)
Unit
tRC=min.tCLK=min, BL=1,CL=3
mA
CKE=L,tCLK=15ns, /CS>Vcc-0.2V
CKE=CLK=L, /CS>Vcc-0.2V
CKE=H,tCLK=15ns,VIH>Vcc-0.2V,VIL<0.2V
CKE=H,CLK=L,VIH>Vcc-0.2V,VIL<0.2V(fixed)
mA
mA
mA
mA
tCLK=min, BL=4, CL=3,all banks activ e(discerte)
tRC=min, tCLK=min
mA
mA
mA
CKE <0.2V
Symbol
Icc1
Icc2P
Icc2PS
Icc2N
Icc2NS
Icc4
Icc5
Icc6
Parameter
operating current
one bank active (discrete)
precharge stanby
current
in power-down mode
precharge stanby current
in non power-down mode
burst current
auto-refresh current
self-refresh current
mA
mA
CKE=H,tCLK=15ns
Icc3NS
Icc3N
CKE=H,CLK=L
active stanby current
in non power-down mode
one bank active (discrete)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MH32S72QJA-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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MH32TAD-R 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
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