參數(shù)資料
型號(hào)： MH4S64CBMD-15
廠商： Mitsubishi Electric Corporation
英文描述： 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
中文描述： 268435456位（4194304字，64位）SynchronousDRAM
文件頁(yè)數(shù)： 16/55頁(yè)
文件大小： 586K
代理商： MH4S64CBMD-15
MH4S64BLG -7,-8,-10
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 55 )
16
MITSUBISHI
ELECTRIC
29.Oct.1998
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0227-0.5
Bank Activation and Precharge All (BL=4, CL=3)
CLK
Command
A0-9
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
Qa0
Qa1
Qa2
Qa3
ACT
Xb
Xb
01
PRE
tRRD
tRCD
1
ACT
Xb
Xb
01
Precharge all
tRAS
tRP
OPERATION DESCRIPTION
BANK ACTIVATE
The SDRAM has four independent banks. Each bank is activated by the ACT command with
the bank address(BA0,1). A row is indicated by the row address A11-0. The minimum
activation interval between one bank and the other bank is tRRD.The number of banks which
are active concurrently is not limited.
PRECHARGE
The PRE command deactivates indicated by BA. When both banks are active, the precharge
all command(PREA,PRE + A10=H) is available to deactivate them at the same time. After tRP
from the precharge, an ACT command can be issued.
READ
After tRCD from the bank activation, a READ command can be issued. 1st output date is
available after the /CAS Latency from the READ, followed by (BL-1) consecutive date when
the Burst Length is BL. The start address is specified by A7-0, and the address sequence of
burst data is defined by the Burst Type. A READ command may be applied to any active bank,
so the row precharge time(tRP) can be hidden behind continuous output data(in case of BL=8)
by interleaving the dual banks. When A10 is high at a READ command, the
auto-precharge(READA) is performed. Any command (READ, WRITE, PRE, ACT) to the
same bank is inhibited till the internal precharge is complete. The internal precharge start at
BL after READA. The next ACT command can be issued after (BL + tRP) from the previous
READA.
A11
Xa
Xb
Xb
tRCmin
2ACT command/tRCmin
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