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    • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄371108 > MH8S64AQFC-8L (Mitsubishi Electric Corporation) 536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM PDF資料下載
    參數(shù)資料
    型號: MH8S64AQFC-8L
    廠商: Mitsubishi Electric Corporation
    英文描述: 536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
    中文描述: 536870912位(8,388,608 -文字,64位)SynchronousDRAM
    文件頁數(shù): 7/55頁
    文件大小: 588K
    代理商: MH8S64AQFC-8L
    第1頁第2頁第3頁第4頁第5頁第6頁當前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
    MH8S64PHC -7,-8,-10
    536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
    MITSUBISHI LSIs
    ( / 55 )
    7
    MITSUBISHI
    ELECTRIC
    9/ Dec. /1998
    Preliminary Spec.
    Some contents are subject to change without notice.
    MIT-DS-0282-0.0
    BASIC FUNCTIONS
    The MH8S64PHC provides basic functions,bank(row)activate,burst read / write,
    bank(row)precharge,and auto / self refresh.
    Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
    addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
    precharge option,respectively.
    To know the detailed definition of commands please see the command truth table.
    /S
    Chip Select : L=select, H=deselect
    /RAS
    Command
    /CAS
    Command
    /WE
    Command
    CKE
    Refresh Option @refresh command
    A10
    Precharge Option @precharge or read/write command
    CK
    define basic commands
    Activate(ACT) [/RAS =L, /CAS = /WE =H]
    Read(READ) [/RAS =H,/CAS =L, /WE =H]
    Write(WRITE) [/RAS =H, /CAS = /WE =L]
    Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
    Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
    ACT command activates a row in an idle bank indicated by BA0,1.
    READ command starts burst read from the active bank indicated by BA0,1.First output
    data appears after /CAS latency. When A10 =H at this command,the bank is
    deactivated after the burst read(auto-precharge,
    READA
    ).
    WRITE command starts burst write to the active bank indicated by BA0,1. Total data
    length to be written is set by burst length. When A10 =H at this command, the bank is
    deactivated after the burst write(auto-precharge,
    WRITEA
    ).
    PRE command deactivates the active bank indicated by BA0,1. This command also
    terminates burst read / write operation. When A10 =H at this command, both banks are
    deactivated(precharge all,
    PREA
    ).
    REFA command starts auto-refresh cycle. Refresh address including bank address are
    generated internally. After this command, the banks are precharged automatically.
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    相關代理商/技術參數(shù)
    參數(shù)描述
    MH8S64BALD-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
    MH8S64BALD-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
    MH8S64BALD-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
    MH8S64BALD-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
    MH8S64BBKD-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
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