參數(shù)資料
型號(hào)： MHPM6B15E60D3
廠商： MOTOROLA INC
元件分類： IGBT 晶體管
英文描述： Hybrid Power Module
中文描述： 15 A, 600 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 129K
代理商： MHPM6B15E60D3
2
Motorola IGBT Device Data
MAXIMUM DEVICE RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95
°
C)
Continuous Input Rectifier Current (TC = 25
°
C)
Non–Repetitive Peak Input Rectifier Forward Surge Current (2)
(TJ = 95
°
C prior to start of surge)
IOmax
IDC
IFSM
20
A
20
A
475
A
IGBT Power Dissipation per die (TC = 95
°
C)
7E60
10E60
15E60
PD
14
17
23
W
Free–Wheeling Diode Power Dissipation per die (TC = 95
°
C)
7E60
10E60
15E60
PD
7.4
9.0
13
W
Input Rectifier Power Dissipation per die (TC = 95
°
C)
Junction Temperature Range
PD
TJ
tsc
VISO
TC
Tstg
—
13
W
–40 to +150
°
C
Short Circuit Duration (VCE = 400 V, TJ = 125
°
C)
Isolation Voltage, pin to baseplate
10
s
2500
Vac
Operating Case Temperature Range
–40 to +95
°
C
Storage Temperature Range
–40 to +150
°
C
Mounting Torque — Heat Sink Mounting Holes
12
lb–in
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 15 A)
TJ = 125
°
C
VF
—
—
0.97
0.88
1.2
—
V
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150
°
C
IR
—
—
50
3000
—
—
A
Gate–Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125
°
C
IGES
ICES
VGE(th)
V(BR)CES
VCE(SAT)
—
—
±
50
A
—
5.0
100
A
4.0
6.0
8.0
V
600
—
—
V
—
—
2.0
1.8
2.4
—
V
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125
°
C
VF
—
—
2.0
1.8
2.3
—
V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
7E60
10E60
15E60
Cies
—
—
—
780
1020
1605
—
—
—
pF
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT
7E60
10E60
15E60
RJC
—
—
—
3.1
2.6
1.9
3.8
3.2
2.4
°
C/W
Thermal Resistance — Free–Wheeling Diode
7E60
10E60
15E60
RJC
—
—
—
6.0
4.8
3.4
7.5
6.1
4.2
°
C/W
Thermal Resistance — Input Rectifier
RJC
—
3.4
4.2
°
C/W
(2) 1.0 ms = 10% pulse width (tw 10%)
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