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MHPM6B10A60D MHPM6B20A60D
2
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
TJ = 125
°
C
IGES
ICES
—
—
±
20
μ
A
—
6.0
2000
100
μ
A
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125
°
C
VGE(th)
V(BR)CES
VCE(SAT)
4.0
6.0
8.0
V
600
—
—
V
—
—
2.35
2.31
3.5
—
V
Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125
°
C
VF
—
—
1.23
1.12
2.0
—
V
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)
10A60
20A60
Cies
—
—
2300
4400
—
—
pF
Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V)
10A60
20A60
QT
—
—
75
135
—
—
nC
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 25
°
C)
Recommended Gate Resistor
Turn–On
10A60
20A60
Turn–Off
RG(on)
RG(off)
td(on)
—
—
—
180
47
20
—
—
—
Turn-On Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
—
—
375
215
—
—
ns
Rise Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
tr
—
—
160
125
—
—
ns
Turn–Off Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
td(off)
—
219
—
ns
Fall Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
tf
—
210
500
ns
Turn-On Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(on)
—
—
0.85
1.6
1.0
2.0
mJ
Turn-Off Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(off)
—
—
0.13
0.3
1.0
2.0
mJ
Diode Reverse Recovery Time
(IF = IFmax, V = 300 V, RG as specified)
trr
—
150
—
ns
Peak Reverse Recovery Current
(IF = IFmax, V = 300 V, RG as specified)
10A60
20A60
Irrm
—
—
6.8
12
—
—
A
Diode Stored Charge
(IF = IFmax, V = 300 V, RG as specified)
10A60
20A60
Qrr
—
—
560
1060
—
—
nC