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參數(shù)資料
| 型號(hào)： | MHPM6B2A60D |
| 廠商： | Motorola, Inc. |
| 英文描述： | DIODE ZENER 150MW 4.7V 0603 |
| 中文描述： | 混合動(dòng)力模塊 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 166K |
| 代理商： | MHPM6B2A60D |
3
MHPM6B10A60D MHPM6B20A60D
MOTOROLA
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 125
°
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Turn–On Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
td(on)
—
—
335
200
—
—
ns
Rise Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
tr
—
—
160
125
—
—
ns
Turn–Off Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
td(off)
—
230
—
ns
Fall Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
tf
—
460
—
ns
Turn–On Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(on)
—
—
1.2
2.2
—
—
mJ
Turn–Off Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(off)
—
—
0.44
0.82
—
—
mJ
Diode Reverse Recovery Time
(IF = IFmax, V = 300 V, RG as specified)
trr
—
240
—
ns
Peak Reverse Recovery Current
(IF = IFmax, V = 300 V, RG as specified)
10A60
20A60
Irrm
—
—
10
18
—
—
A
Diode Stored Charge
(IF = IFmax, V = 300 V, RG as specified)
10A60
20A60
Qrr
—
—
1330
2400
—
—
nC
THERMAL CHARACTERISTICS
(Each Die)
Thermal Resistance — IGBT
10A60
20A60
RJC
—
—
1.94
1.28
2.43
1.60
°
C/W
Thermal Resistance — Free–Wheeling Diode
10A60
20A60
RJC
—
—
5.28
2.61
6.60
3.26
°
C/W
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