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參數(shù)資料
| 型號： | MHPM7A15A60A |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | MHPM7A15A60A |
MHPM7A15A60A
2
MOTOROLA
MAXIMUM DEVICE RATINGS (continued)
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
BRAKE CIRCUIT
IGBT Reverse Voltage
VCES
VGES
IC
IC(pk)
PD
600
V
Gate-Emitter Voltage
±
20
V
Continuous IGBT Collector Current
15
A
Peak IGBT Collector Current (PW = 1.0 ms) (2)
30
A
IGBT Power Dissipation
55
W
Diode Reverse Voltage
VRRM
IF
IF(pk)
600
V
Continuous Output Diode Current
15
A
Peak Output Diode Current (PW = 1.0 ms) (2)
30
A
TOTAL MODULE
Isolation Voltage — (47–63 Hz, 1.0 Minute Duration)
VISO
TA
TC
Tstg
—
2500
VAC
Ambient Operating Temperature Range
– 40 to + 85
°
C
Operating Case Temperature Range
– 40 to + 90
°
C
Storage Temperature Range
– 40 to +150
°
C
Mounting Torque
6.0
lb–in
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (VRRM = 600 V)
Forward Voltage (IF = 15 A)
Thermal Resistance (Each Die)
IR
VF
R
θ
JC
—
10
50
μ
A
—
1.05
1.5
V
—
—
2.9
°
C/W
OUTPUT INVERTER
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
IGES
ICES
—
—
±
20
μ
A
TJ = 25
°
C
TJ = 125
°
C
—
—
—
—
200
2.0
μ
A
mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A)
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V)
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
VGE(th)
V(BR)CES
VCE(SAT)
Cies
4.0
6.0
8.0
V
600
700
—
V
—
2.7
3.5
V
—
950
—
pF
QT
tfi
—
75
—
nC
—
200
350
ns
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
E(on)
—
—
1.0
mJ
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
E(off)
—
—
1.0
mJ
Diode Forward Voltage (IF = 15 A, VGE = 0 V)
Diode Reverse Recovery Time
(IF = 15 A, V = 400 V, dI/dt = 50 A/
μ
s)
VF
trr
—
1.5
2.0
V
—
140
200
ns
Diode Stored Charge (IF = 15 A, V = 400 V, di/dt = 50 A/
μ
s)
Thermal Resistance — IGBT (Each Die)
Qrr
R
θ
JC
R
θ
JC
—
—
900
nC
—
—
1.9
°
C/W
Thermal Resistance — Free-Wheeling Diode (Each Die)
—
—
3.7
°
C/W
(2) 1.0 ms = 1.0% duty cycle
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