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參數(shù)資料
| 型號： | MHPM7A15A60A |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | MHPM7A15A60A |
3
MHPM7A15A60A
MOTOROLA
ELECTRICAL CHARACTERISTICS
(continued)
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) (1)
IGES
ICES
—
—
±
20
μ
A
TJ = 25
°
C
TJ = 125
°
C
—
—
—
—
200
2.0
μ
A
mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) (1)
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V)
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
VGE(th)
V(BR)CES
VCE(SAT)
Cies
4.0
6.0
8.0
V
600
700
—
V
—
2.7
3.5
V
—
950
—
pF
QT
tfi
—
75
—
nC
—
200
350
ns
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
E(on)
—
—
1.0
mJ
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150
)
E(off)
—
—
1.0
mJ
Diode Forward Voltage (IF = 15 A)
Diode Reverse Leakage Current
VF
IR
R
θ
JC
R
θ
JC
—
1.5
2.0
V
—
—
50
μ
A
Thermal Resistance — IGBT
—
—
1.9
°
C/W
Thermal Resistance — Diode
—
—
3.7
°
C/W
SENSE RESISTOR
Resistance
Rsense
Rtol
—
10
—
m
Resistance Tolerance
–1.0
—
+1.0
%
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
(1) 1 cycle = 50 or 60 Hz.
VF
—
0.660
—
V
TCVF
—
–1.95
—
mV/
°
C
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