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參數(shù)資料
| 型號(hào)： | MHPM7B8A120A |
| 廠商： | MOTOROLA INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 8 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-25 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 162K |
| 代理商： | MHPM7B8A120A |
MHPM7B8A120A
2
MOTOROLA
MAXIMUM DEVICE RATINGS (continued)
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
BRAKE CIRCUIT
IGBT Reverse Voltage
VCES
VGES
IC
IC(pk)
PD
1200
V
Gate-Emitter Voltage
±
20
V
Continuous IGBT Collector Current
8.0
A
Peak IGBT Collector Current (PW = 1.0 ms) (2)
16
A
IGBT Power Dissipation
50
W
Diode Reverse Voltage
VRRM
IF
IF(pk)
1200
V
Continuous Output Diode Current
8.0
A
Peak Output Diode Current (PW = 1.0 ms) (2)
16
A
TOTAL MODULE
Isolation Voltage – (47–63 Hz, 1.0 Minute Duration)
VISO
TA
TC
Tstg
–
2500
VAC
Ambient Operating Temperature Range
– 40 to + 85
°
C
Operating Case Temperature Range
– 40 to + 90
°
C
Storage Temperature Range
– 40 to +150
°
C
Mounting Torque
6.0
lb–in
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (VRRM = 1200 V)
Forward Voltage (IF = 8.0 A)
Thermal Resistance (Each Die)
IR
VF
R
θ
JC
–
10
50
μ
A
–
1.05
1.5
V
–
–
2.9
°
C/W
OUTPUT INVERTER
Gate-Emitter Leakage Current (VCE = 0 V, VGE =
±
20 V)
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
IGES
ICES
–
–
±
20
μ
A
TJ = 25
°
C
TJ = 125
°
C
–
–
–
–
100
500
μ
A
μ
A
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)
Fall Time – Inductive Load
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
VGE(th)
V(BR)CES
VCE(SAT)
Cies
4.0
6.0
8.0
V
1200
1300
–
V
–
2.5
3.5
V
–
1000
–
pF
QT
tfi
–
75
–
nC
–
350
500
ns
Turn-On Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
E(on)
–
–
1.0
mJ
Turn-Off Energy
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150
)
E(off)
–
–
1.0
mJ
Diode Forward Voltage (IF = 8.0 A, VGE = 0 V)
Diode Reverse Recovery Time
(IF = 8.0 A, V = 600 V, dI/dt = 50 A/
μ
s)
VF
trr
–
1.6
2.2
V
–
140
200
ns
Diode Stored Charge (IF = 8.0 A, V = 600 V, di/dt = 50 A/
μ
s)
Thermal Resistance – IGBT (Each Die)
Qrr
R
θ
JC
R
θ
JC
–
–
900
nC
–
–
2.2
°
C/W
Thermal Resistance – Free-Wheeling Diode (Each Die)
–
–
3.7
°
C/W
(2) 1.0 ms = 1.0% duty cycle
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