參數(shù)資料
型號(hào): MHPM7B8A120A
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Hybrid Power Module
中文描述: 8 A, 1200 V, N-CHANNEL IGBT
封裝: PLASTIC PACKAGE-25
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 162K
代理商: MHPM7B8A120A
MHPM7B8A120A
6
MOTOROLA
Typical Characteristics
RG, GATE RESISTANCE (
)
IC, COLLECTOR CURRENT (A)
μ
S
IC, COLLECTOR CURRENT (A)
QG, GATE CHARGE (nC)
,
V
IC, COLLECTOR CURRENT (A)
10000
100
10
1
RG, GATE RESISTANCE (
)
Figure 8. Gate–to–Emitter Voltage versus
Gate Charge
900
500
300
200
0
70
60
40
20
0
Figure 9. Inverter Switching Energy E(off) versus
Collector Current IC
10000
100
10
10
1
100
Figure 10. Inverter Switching Energy E(off) versus
Gate Resistance RG
10000
1000
100
1000
10
100
VCE = 600 V
VGE = 15 V
IC = 8.0 A
25
°
C
Figure 11. Inverter Switching Time tf, td, t(off)
versus Collector Current IC
S
Figure 12. Inverter Switching Time tf, td, t(off)
versus Collector Current IC
10000
100
10
1
Figure 13. Inverter Switching Time tf,td, t(off)
versus Gate Resistance RG
10000
1000
100
1000
10
100
400 V
600 V
500 V
18
16
12
0
8
6
2
VCE = 600 V
VGE = 15 V
RG = 10
25
°
C
μ
S
,
V
VCE = 600 V
VGE = 15 V
RG = 10
TJ = 25
°
C
S
S
VCE = 600 V
VGE = 15 V
RG = 10
TJ = 125
°
C
VCE = 600 V
VGE = 15 V
IC = 8.0 A
TJ = 25
°
C
600 V
400 V
500 V
TJ =125
°
C
td
tf
t(off)
td
tf
tf
td
t(off)
t(off)
700
400
30
10
50
1000
1000
1000
TJ =125
°
C
TJ = 25
°
C
IC = 8.0 A
600
800
10
4
14
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