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參數(shù)資料
| 型號(hào)： | MHVIC915NR2 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 506K |
| 代理商： | MHVIC915NR2 |
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MHVIC915NR2
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50
ο
hm system) V
DD
= 27 Vdc, I
DQ1
= 80 mA, I
DQ2
= 120 mA, 865-895 MHz
Quiescent Current Accuracy over Temperature (-10 to 85
°
C) at Nominal Value
(1)
Δ
I
QT
—
±
5
—
%
Gain Flatness in 30 MHz Bandwidth @ P
out
= 23 dBm (800 MHz to 960 MHz)
G
F
Φ
—
0.20
—
dB
Deviation from Linear Phase in 30 MHz Bandwidth @ P
out
= 23 dBm
—
±
0.2
—
°
Group Delay @ P
out
= 23 dBm Including Output Matching
Delay
—
2.2
—
ns
Part to Part Phase Variation @ P
out
= 23 dBm
ΦΔ
—
±
10
—
°
Typical GSM Performances
(In Freescale GSM Test Fixture, 50
ο
hm system) V
DD
= 26 Vdc, I
DQ1
= 50 mA, I
DQ2
= 140 mA,
921-960 MHz, CW
Output Power, 1 dB Compression Point
P1dB
—
15
—
W
Power Gain @ P1dB
G
ps
—
30
—
dB
Power Added Efficiency @ P1dB
PAE
—
56
—
%
Input Return Loss @ P1dB
IRL
—
-16
—
dB
Error Vector Magnitude @ 5 W
—
—
0.9
—
%
Intermodulation Distortion
(15 W PEP, 2-Tone, 100 kHz Tone Spacing)
IMD
—
-30
—
dBc
Power Added Efficiency (15 W PEP, 2-Tone, 100 kHz Tone Spacing)
PAE
—
35
—
%
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
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