參數(shù)資料
型號(hào): MHVIC915NR2
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifier
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 8/16頁
文件大?。?/td> 506K
代理商: MHVIC915NR2
8
RF Device Data
Freescale Semiconductor
MHVIC915NR2
Figure 17. Series Equivalent Input and Load Impedance
f
MHz
Z
in
Ω
Z
load
Ω
750
765
780
42.11 - j2.79
40.09 + j0.06
40.86 - j1.37
8.24 + j5.33
8.31 + j5.56
8.39 + j5.82
V
DD
= 26 Vdc, I
DQ1
= 50 mA, I
DQ2
= 140 mA, P
out
= 1.25 W CW
Z
in
=
Device input impedance as measured from
RF input to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Zin
Zload
Device
Under Test
Output
Matching
Network
795
810
825
39.77 + j1.52
40.49 + j4.39
39.89 + j3.01
8.50 + j5.95
8.62 + j6.02
8.82 + j6.12
840
855
870
41.48 + j5.70
43.51 + j7.03
42.89 + j6.73
8.94 + j6.19
9.12 + j6.17
9.16 + j6.12
885
900
915
46.81 + j7.87
51.79 + j7.02
49.21 + j7.74
9.33 + j6.09
9.38 + j5.95
9.50 + j5.85
f = 960 MHz
f = 750 MHz
Z
o
= 50
Ω
Z
in
Z
load
f = 960 MHz
f = 750 MHz
930
945
960
54.48 + j5.65
59.16 + j0.75
57.05 + j3.61
9.47 + j5.73
9.54 + j5.63
9.42 + j5.45
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