1
MHW1810–1 MHW1810–2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics
Output Power = 16 Watts CW Typ
Power Gain = 26 dB Typ @ 10 Watts (MHW1810–1)
Power Gain = 34 dB Typ @ 10 Watts (MHW1810–2)
Efficiency = 34% Min @ 10 Watts
50
Input/Output System
Designed for GSM Linearity Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Supply Voltage
VS
Vbias
Pin
28
Vdc
DC Bias Voltage
28
Vdc
RF Input Power
MHW1810–1
MHW1810–2
21
16
dBm
RF Output Power
Pout
TC
20
W
Operating Case Temperature Range
– 10 to +90
°
C
Storage Temperature Range
Tstg
– 30 to +100
°
C
ELECTRICAL CHARACTERISTICS
(TC = +25
°
C, VS = 26 Vdc; Vbias = 5 Vdc; 50
system, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
1805
—
1880
MHz
Quiescent Current (Pin = 0 mW)
Bias Current
IDQ
Ibias
P1dB
GP
100
—
150
mA
—
—
2
mA
Output Power at 1 dB Compression
10
14
—
W
Power Gain (Pout = 10 W)
Power Gain
(Pout = 10 W)
MHW1810–1
MHW1810–2
24
32
26
34
28
36
dB
Efficiency (Pout = 10 W)
Input VSWR (Pout = 10 W)
Harmonics at 2fo (Pout = 10 W)
Harmonics at 3fo (Pout = 10 W)
Reverse IMD; Pout = 10 W; Preverse = –40 dBc
(F1 = F0
±
200 kHz @ –40 dBc)
η
34
—
—
%
VSWRin
H2
H3
IMDr
—
—
1.8:1
—
—
—
– 35
dBc
—
—
– 45
dBc
—
—
– 50
dBc
Load Mismatch Stress
Load VSWR = 5:1, All Phase Angles
ψ
No Degradation in
Output Power
Stability (Pout = 10 mW to 10 W, VS
≤
26 Vdc)
Load VSWR = 5:1, All Phase Angles
—
All Spurious Outputs More Than
60 dB Below Desired Signal
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MHW1810/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 1805–1880 MHz
RF POWER AMPLIFIER
CASE 301AW–02, STYLE 1
REV 1