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參數(shù)資料
| 型號(hào)： | MIC2593-5BTQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Dual-Slot PCI Hot Plug Controller |
| 中文描述： | 雙插槽的PCI熱插拔控制器 |
| 文件頁數(shù)： | 23/26頁 |
| 文件大?。?/td> | 170K |
| 代理商： | MIC2593-5BTQ |
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April 2004
23
M9999-042204
MIC2593
Micrel
50ms before the MIC2593 circuit breaker trips. During that
time, the dissipation in the MOSFET is given by:
P = E
×
I; E
MOSFET
= [5V
–
5A(0.6
)] = 2V
P
MOSFET
= (2V
×
5A) = 10W for 50ms
At first glance, it would appear that a really hefty MOSFET is
required to withstand this sort of fault condition. This is where
the transient thermal impedance curves become very useful.
Figure 13 shows the curve for the Vishay (Siliconix) Si4430DY,
a commonly used SO-8 power MOSFET.
Taking the simplest case first, we
’
ll assume that once a fault
event such as the one in question occurs, it will be a long time,
several seconds, before the fault is isolated and the channel
is reset. In such a case, we can approximate this as a
“
single
pulse
”
event, that is to say, there
’
s no significant duty cycle.
Then, reading up from the X-axis at the point where
“
Square
Wave Pulse Duration
”
is equal to 0.1sec (=100msec), we see
that the Z
θ
(J-A)
of this MOSFET to a highly infrequent event of
this duration is only 7% of its continuous R
θ
(J-A)
.
This particular part is specified as having an R
θ
(J-A)
of
35
°
C/W for intervals of 10 seconds or less. Thus:
Assume T
A
= 55
°
C maximum, 1 square inch of copper at the
drain leads, no airflow.
Recalling from our previous approximation hint, the part has
an R
ON
of (0.014/2) = 7m
at 25
°
C.
Assume it has been carrying just about 5A for some time.
When performing this calculation, be sure to use the highest
anticipated ambient temperature (T
A(MAX)
) in which the
MOSFET will be operating as the starting temperature, and
find the operating junction temperature increase (
T
J
) from
that point. Then, as shown next, the final junction temperature
is found by adding T
A(MAX)
and
T
J
. Since this is not a closed-
form equation, getting a close approximation may take one or
two iterations, but it
’
s not a hard calculation to perform and
tends to converge quickly.
Then the starting (steady-state)T
J
is:
T
J
T
A(MAX)
+
T
J
T
A(MAX)
+ [R
ON
+ (T
A(MAX)
–
T
A
)(0.005/
°
C)(R
ON
)]
×
I
2
×
R
θ
(J-A)
T
J
55
°
C + [7m
+ (55
°
C
–
25
°
C)(0.005)(7m
)]
×
(5A)
2
×
(35
°
C/W)
T
J
(55
°
C + (0.20125W)(35
°
C/W)
62.0
°
C
Iterate the calculation once to see if this value is within a few
percent of the expected final value. For this iteration we will
start with T
J
equal to the already calculated value of 62.0
°
C:
T
J
T
A
+ [7m
+ (62.0
°
C-25
°
C)(0.005)(7m
)]
×
(5A)
2
×
(35
°
C/W)
T
J
( 55
°
C + (0.21008W)(35
°
C/W)
62.35
°
C
So our original approximation of 62.0
°
C was very close to the
correct value. We will use T
J
= 62
°
C.
Finally, add (10W)(35
°
C/W)(0.07) = 24.5
°
C to the steady-state
T
J
to get T
J(TRANSIENT MAX.)
= 86.5
°
C. This is an acceptable
maximum junction temperature for this part.
10
-4
10
-3
10
-2
10
-1
1
10
100
600
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Imperance, Juction-to-Ambient
1. Duty Cycle, D =
2. Per Unit Base = R
θ
JA
= 67
°
C/W
3. T
JM
–
T
A
= P
DM
Z
θ
JA
4. Surface Mounted
(t)
t
1
t
2
t
1
t
2
Notes:
P
DM
Square Wave Pulse Duration (sec)
N
T
Figure 13. Si4430DY MOSFET Transient Thermal Impedance Curve
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| MIL-PRF-19500 | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
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