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參數(shù)資料
| 型號(hào)： | MIC5010BM |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full-Featured High- or Low-Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO14 |
| 封裝： | 0.150 INCH, SOIC-14 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | MIC5010BM |
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5-89
MIC5010
Electrical Characteristics
(Note 3) Test circuit. T
A
= –55
°
C to +125
°
C, V
+
= 15V, V
1
= 0 V, I
4
=
I
5
= I
14
= 0, all
switches open, unless otherwise specified.
Micrel
5
Parameter
Conditions
V
+
= 32V
Min
Typical
Max
Units
Supply Current, I
13
V
IN
= 0V, S4 closed
V
IN
= V
S
= 32V, I
4
= 200
μ
A
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
0.1
10
μ
A
8
20
mA
Logic Input Voltage, V
IN
V
+
= 4.75V
2
V
4.5
V
V
+
= 15V
5.0
V
Logic Input Current, I
3
V+ = 32V
–1
μ
A
1
μ
A
Input Capacitance
Pin 3
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 7V, I
8
= 0
V
+
= 15V, I
8
= 100
μ
A
V+ = 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
13
15
V
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
24
27
V
Zener Clamp,
11
12.5
15
V
V
GATE
– V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
11
13
16
V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
I
4
= 200
μ
A
S2 closed, V
IN
= 5V,
Increase I
5
25
50
μ
s
Gate Turn-off Time, t
OFF
4
10
μ
s
Threshold Bias Voltage, V
4
Current Sense Trip Voltage,
1.7
2
2.2
V
V
+
= 7V,
S4 closed
75
105
135
mV
V
SENSE
– V
SOURCE
I
4
= 100
μ
A
V
+
= 15V
V
S
= 4.9V
S4 closed
70
100
130
mV
150
210
270
mV
I
4
= 200
μ
A
V
+
= 32V
V
S
= 11.8V
V
S
= 0V
V
S
= 25.5V
140
200
260
mV
360
520
680
mV
I
4
= 500
μ
A
350
500
650
mV
Peak Current Trip Voltage,
V
SENSE
– V
SOURCE
Fault Output Voltage, V
14
S3, S4 closed,
V
+
= 15V, V
IN
= 5V
V
IN
= 0V, I
14
= –100
μ
A
V
IN
= 5V, I
14
= 100
μ
A, current sense tripped
V
1
above which current sense is disabled
Minimum possible V
1
1.6
2.1
V
0.4
1
V
14
14.6
V
Current Sense Inhibit, V
1
7.5
13
V
1
V
Note 1
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings
.
The MIC5010 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information
.
Note 2
Note 3
Note 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC5010BN | Full-Featured High- or Low-Side MOSFET Driver |
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| MIC5013BM | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| MIC5013BN | FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5010BN | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Full-Featured High- or Low-Side MOSFET Driver |
| MIC5011 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011BM | 功能描述:IC DRIVER MIN PARTS HI/LO 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5011BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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