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參數(shù)資料
| 型號： | MIC5010BM |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Full-Featured High- or Low-Side MOSFET Driver |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDSO14 |
| 封裝： | 0.150 INCH, SOIC-14 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 189K |
| 代理商： | MIC5010BM |
MIC5010
Micrel
5-94
April 1998
Applications Information
(Continued)
Residual Resistances Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50m
power MOSFET for low drop, but
careless construction techniques could easily add 50 to 100
m
resistance. Do not use a socket for the MOSFET. If the
MOSFET is a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A floating millivoltmeter can
identify connections that are contributing excess drop un-
der load.
Circuit Topologies
The MIC5010 is suited for use in high- or low-side driver
applications with over-current protection for both current-
sensing and standard MOSFETs. In addition, the MIC5010
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in the
Test Circuit) are the slowest; their speed is reflected in the
gate turn-on time specifications. The fastest drivers are the
low-side and bootstrapped high-side types. Load current
switching times are often much faster than the time to full
gate enhancement, depending on the circuit type, the
MOSFET, and the load. Turn-off times are essentially the
same for all circuits (less than 10
μ
s to V
GS
= 1V). The choice
of one topology over another is based on a combination of
considerations including speed, voltage, and desired sys-
tem characteristics. Each topology is described in this
section. Note that I
L
, as used in the design equations, is the
load current that just trips the over-current comparator.
Low-Side Driver with Current Shunt
(Figure 2). The over-
current comparator monitors R
S
and trips if I
L
×
R
S
exceeds
V
TRIP
. R
TH
is selected to produce the desired trip voltage.
As a guideline, keep V
TRIP
within the limits of 100mV and
500mV (R
TH
= 3.3k
to 20k
). Thresholds at the high end
offer the best noise immunity, but also compromise switch
drop (especially in low voltage applications) and power
dissipation.
The trip current is set higher than the maximum expected
load current--typically twice that value. Trip point accuracy
is a function of resistor tolerances, comparator offset (only
a few millivolts), and threshold bias voltage (V
4
). The values
shown in Figure 2 are designed for a trip current of 20
amperes. It is important to ground pin 6 at the current shunt
R
S
, to eliminate the effects of ground resistance.
A key advantage of the low-side topology is that the load
supply is limited only by the MOSFET BV
DSS
rating. Clamp-
ing may be required to protect the MOSFET drain terminal
from inductive switching transients. The MIC5010 supply
should be limited to 15V in low-side topologies; otherwise,
a large current will be forced through the gate clamp zener.
Low-side drivers constructed with the MIC501X family are
also fast; the MOSFET gate is driven to near supply
immediately when commanded ON. Typical circuits achieve
10V enhancement in 10
μ
s or less on a 12 to 15V supply.
High-Side Driver with Current Shunt
(Figure 3). The
comparator input pins (source and sense) float with the
current sensing resistor (R
S
) on top of the load. R1 and R2
add a small, additional potential to V
TRIP
to prevent false-
triggering of the over-current shutdown circuit with open or
inductive loads. R1 is sized for a current flow of 1mA, while
R2 contributes a drop of 100mV. The shunt voltage should
be 200 to 500mV at the trip point. The example of Figure 3
gives a 10A trip current when the output is near supply. The
trip point is somewhat reduced when the output is at ground
as the voltage drop across R1 (and therefore R2) is zero.
High-side drivers implemented with MIC501X drivers are
Inhibit
Input
Thresh
Sense
Source
Gnd
Fault
V+
C1
Com
C2
Gate
1
2
3
4
5
6
7
8
9
10
11
12
13
14
MIC5010
IRF540
10μF
10k
10m
IRC 4LPW-5
Figure 2. Low-Side Driver with
Current Shunt
LOAD
Control Input
=7 to 15V
V+
+
NC
NC
(International Resistive Company)
V
LOAD
I =20A (trip current)
L
V
TRIP
= 200mV
V
TRIP
I
L
2200–1000
V
TRIP
For this example:
R =
R =
R
R
TH
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5010BN | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Full-Featured High- or Low-Side MOSFET Driver |
| MIC5011 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Minimum Parts High- or Low-Side MOSFET Driver |
| MIC5011BM | 功能描述:IC DRIVER MIN PARTS HI/LO 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5011BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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