參數(shù)資料
型號: MIC5013
廠商: Micrel Semiconductor,Inc.
英文描述: Protected High- or Low-Side MOSFET Driver(帶過流保護的高/低邊MOS場效應管驅動器)
中文描述: 保護高或低側MOSFET驅動器(帶過流保護的高/低邊馬鞍山場效應管驅動器)
文件頁數(shù): 3/16頁
文件大?。?/td> 153K
代理商: MIC5013
July 2000
3
MIC5013
MIC5013
Electrical Characteristics
(Note 3) Test circuit. T
A
=
55
°
C to +125
°
C, V
+
= 15V
, all switches open, unless
otherwise specified.
Micrel
Parameter
Conditions
V
+
= 32V
Min
Typical
Max
Units
Supply Current, I
7
V
IN
= 0V, S4 closed
V
IN
= V
S
= 32V
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
0.1
10
μ
A
8
20
mA
Logic Input Voltage, V
IN
V
+
= 4.75V
2
V
4.5
V
V
+
=15V
5.0
V
Logic Input Current, I
1
V+ = 32V
1
μ
A
1
μ
A
Input Capacitance
Pin 1
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 7V, I
6
= 0
V
+
= 15V, I
6
= 100
μ
A
V+ = 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
13
15
V
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
24
27
V
Zener Clamp,
11
12.5
15
V
V
GATE
V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
11
13
16
V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
I
2
= 200
μ
A
S2 closed, V
IN
= 5V,
Increase I
3
60
200
μ
s
Gate Turn-off Time, t
OFF
4
10
μ
s
Threshold Bias Voltage, V
2
Current Sense Trip Voltage,
1.7
2
2.2
V
V
+
= 7V,
S4 closed
75
105
135
mV
V
SENSE
V
SOURCE
I
2
= 100
μ
A
V
+
= 15V
V
S
= 4.9V, S4 open
S4 closed
70
100
130
mV
150
210
270
mV
I
2
= 200
μ
A
V
+
= 32V
V
S
= 11.8V, S4 open
V
S
= 0V, S4 open
V
S
= 25.5V, S4 open
140
200
260
mV
360
520
680
mV
I
2
= 500
μ
A
350
500
650
mV
Peak Current Trip Voltage,
V
SENSE
V
SOURCE
Fault Output Voltage, V
8
S3, S4 closed,
V
+
= 15V, V
IN
= 5V
V
IN
= 0V, I
8
=
100
μ
A
V
IN
= 5V, I
8
= 100
μ
A, current sense tripped
1.6
2.1
V
0.4
1
V
14
14.6
V
Note 1
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings
.
The MIC5010 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster
see
Applications Information
.
Note 2
Note 3
Note 4
相關PDF資料
PDF描述
MIC5013BM FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
MIC5013BN FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
MIC5020 Replaced by PTN78060W :
MIC5020BM Replaced by PTN78060W :
MIC5020BN Replaced by PTN78060W :
相關代理商/技術參數(shù)
參數(shù)描述
MIC5013_05 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Protected High- or Low-Side MOSFET Driver
MIC5013BM 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5013BM TR 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5013BN 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5013YM 功能描述:功率驅動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube