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參數(shù)資料
| 型號： | MIC5013 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Protected High- or Low-Side MOSFET Driver(帶過流保護的高/低邊MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 保護高或低側(cè)MOSFET驅(qū)動器（帶過流保護的高/低邊馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MIC5013 |
MIC5013
Micrel
MIC5013
6
July 2000
Block Diagram
+
–
V+
CHARGE
PUMP
V. REG
R
S
Q
LOGIC
MIC5013
1
8
5
2
4
3
6
7
500
1k
V+
Gate
Sense
Source
Ground
Threshold
Input
Fault
CURRENT
SENSE
LATCH
1k
+
–
I2
V
TRIP
12.5V
Applications Information
Functional Description
(refer to
block diagram
)
The various MIC5013 functions are controlled via a logic
block connected to the input pin 1. When the input is low, all
functions are turned off for low standby current and the gate
of the power MOSFET is also held low through 500
to an
N-channel switch. When the input is taken above the turn-
on threshold (3.5V typical), the N-channel switch turns off
and the charge pump is turned on to charge the gate of the
power FET. A bandgap type voltage regulator is also turned
on which biases the current sense circuitry.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60
μ
s typical. The charge pump is capable of
pumping the gate up to over twice the supply voltage. For
this reason, a zener clamp (12.5V typical) is provided
between the gate pin 6 and source pin 4 to prevent exceed-
ing the V
GS
rating of the MOSFET at high supplies.
The current sense operates by comparing the sense volt-
age at pin 3 to an offset version of the source voltage at pin
4. Current I2 flowing in threshold pin 2 is mirrored and
returned to the source via a 1k
resistor to set the offset, or
trip voltage. When (V
SENSE
–
V
SOURCE
) exceeds V
TRIP
, the
current sense trips and sets the current sense latch to turn
off the power FET. An integrating comparator is used to
reduce sensitivity to spikes on pin 3. The latch is reset to turn
the FET back on by
“
recycling
”
the input pin 1 low and then
high again.
A resistor R
TH
from pin 2 to ground sets I2, and hence V
TRIP
.
An additional capacitor C
TH
from pin 2 to ground creates a
higher trip voltage at turn-on, which is necessary to prevent
high in-rush current loads such as lamps or capacitors from
false-tripping the current sense.
When the current sense has tripped, the fault pin 8 will be
high as long as the input pin 1 remains high. However, when
the input is low the fault pin will also be low.
Construction Hints
High current pulse circuits demand equipment and assem-
bly techniques that are more stringent than normal low
current lab practices. The following are the sources of
pitfalls most often encountered during prototyping: Sup-
plies: many bench power supplies have poor transient
response. Circuits that are being pulse tested, or those that
operate by pulse-width modulation will produce strange
results when used with a supply that has poor ripple
rejection, or a peaked transient response. Monitor the
power supply voltage that appears at the drain of a high-
side driver (or the supply side of the load in a low-side driver)
with an oscilloscope. It is not uncommon to find bench
power supplies in the 1kW class that overshoot or under-
shoot by as much as 50% when pulse loaded. Not only will
the load current and voltage measurements be affected, but
it is possible to over-stress various components
—
espe-
cially electrolytic capacitors
—
with possibly catastrophic
results. A 10
μ
F supply bypass capacitor at the chip is
recommended.
Residual Resistances: Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50m
power MOSFET for low drop, but
careless construction techniques could easily add 50 to
100m
resistance. Do not use a socket for the MOSFET. If
the MOSFET is a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A floating millivoltmeter can
identify connections that are contributing excess drop un-
der load.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5013_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Protected High- or Low-Side MOSFET Driver |
| MIC5013BM | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013BM TR | 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5013YM | 功能描述:功率驅(qū)動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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