參數(shù)資料
型號: MIC5191
廠商: Micrel Semiconductor,Inc.
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultra High-Speed, High-Current Active Filter/LDO Controller
中文描述: 超高速,高電流有源濾波器/ LDO控制器
文件頁數(shù): 9/13頁
文件大?。?/td> 182K
代理商: MIC5191
A
pril
200
4
9
M
9999-
0
4
2
8
0
4
MIC51
9
1
M
icrel
T
he
V
IN
(min)
to
V
OUT
ratio
and
current
will
determine
the
maximum
R
DSON
required
. F
or
example,
for
a
1.
8
V
(
±
5
%)
to
1.5V
conversion
at
5A
of
load
current,
dropout
voltage
can
be
calculated
as
follows
(using
V
IN
(min):
(
R
V
V
I
R
1 71V 1 5V
(
5A
R
m
DSON
IN
OUT
OUT
DSON
DSON
=
)
=
)
=
4
2
F
or
performance
reasons,
we
do
not
want
to
run
the
N
-
C
hannel
in
dropout
. T
his
will
seriously
affect
transient
re-
sponse
and
PSRR
(power
supply
ripple
rejection)
. F
or
this
reason,
we
want
to
select
a
MOSFET
that
has
lower
than
4
2
m
for
our
example
application
.
S
ize
is
another
important
consideration
. M
ost
importantly,
the
design
must
be
able
to
handle
the
amount
of
power
being
dissipated
.
T
he
amount
of
power
dissipated
can
be
calculated
as
follows
(using
V
IN
(max)):
P
D
=
(
V
IN
V
OUT
)
×
I
OUT
P
D
=
(
1.
89
V
1.5V
)
×
5A
P
D
= 1.
9
5
W
N
ow
that
we
k
now
the
amount
of
power
we
will
be
dissipating,
we
will
need
to
k
now
the
maximum
ambient
air
temperature
. F
or
our
case
we’re
going
to
assume
a
maximum
of
65
°
C
ambient
temperature,
though
different
MOSFET
s
have
different
maximum
operating
junction
temperatures
. M
ost
MOSFET
s
are
rated
to
150
°
C
,
while
others
are
rated
as
high
as
175
°
C. I
n
this
case,
we’re
going
to
limit
our
maximum
junction
temperature
to
125
°
C.
T
he
MIC51
9
1
has
no
internal
thermal
protection
for
the
MOSFET
so
it
is
important
that
the
design
provides
margin
for
the
maximum
junction
temperature
. O
ur
design
will
maintain
better
than
125
°
C
junction
temperature
with
1.
9
5
W
of
power
dissipation
at
an
ambient
temperature
of
65
°
C. O
ur
thermal
resistance
calculates
as
follows:
(
θ
θ
θ
J
A
J
J
D
J
A
J
A
T
max
T
ambient
)
(
P
125 C
65 C
1.
9
5
W
C
W
°
31
=
)
=
=
/
S
o
our
pac
k
age
must
have
a
thermal
resistance
less
than
31
°
C
/W
. T
able
1
shows
a
good
approximation
of
power
dissipation
and
pac
k
age
recommendation
.
Package Power Dissipation
TSOP
-
6
<8
50
mW
TSSOP
-8
<9
50
mW
TSSOP
-8
<
1
W
P
ower
PA
K
1212
-8
<
1.1
W
SO
-8
<
1.125
W
P
ower
PA
K
SO
-8
D
-
P
ac
k
TO
-
220
/
TO
-
263
(
D
2
pac
k
)
<
1.
4W
>
1.
4W
Table 1. Power Dissipation and
Package Recommendation
I
n
our
example,
our
power
dissipation
is
greater
than
1.
4W,
so
we’ll
choose
a
TO
-
263
(
D
2
P
ac
k
)
N
-
C
hannel
MOSFET.
θ
J
A
is
calculated
as
follows
.
θ
J
A
=
θ
J
C
+
θ
CS
+
θ
SA
Where
θ
J
C
is
the
junction
to
case
resistance,
θ
CS
is
the
case-to-sin
k
resistance
and
the
θ
SA
is
the
sin
k
-to-ambi-
ent
air
resistance
.
I
n
the
D
2
pac
k
age
we’ve
selected,
the
θ
J
C
is
2
°
C
/W
. T
he
θ
CS
,
assuming
we
are
using
the
PCB
as
the
heat
sin
k
,
can
be
approximated
to
0.2
°
C
/W
. T
his
allows
us
to
calculate
the
minimum
θ
SA
:
θ
SA
=
θ
J
A
θ
CS
θ
J
C
θ
SA
= 31
°
C
/W
0.2
°
C
/W
2
°
C
/W
θ
SA
= 2
8
.
8
°
C
/W
R
eferring
to
A
pplication
Hint
17
,
D
esigning
PCB
Heat
S
in
k
s
the
minimum
amount
of
copper
area
for
a
D
2
pac
k
at
2
8
.
8
°
C
/W
is
2750
mm
2
(or
0.
4
26
in
2
)
. T
he
solid
line
denotes
convection
heating
only
(
2
oz
.
copper)
and
the
dotted
line
shows
thermal
resistance
with
250
L
FM
air-
flow
. T
he
copper
area
can
be
significantly
reduced
by
increasing
airflow
or
by
adding
external
heat
sin
k
s
.
PC Board Heat Sink
Thermal Resistance vs. Area
Figure 8. PC Board Heat Sink
A
nother
important
characteristic
is
the
amount
of
gate
capacitance
.
Large
gate
capacitance
can
reduce
tran-
sient
performance
by
reducing
the
ability
of
the
MIC51
9
0
to
slew
the
gate
. I
t
is
recommended
that
the
MOSFET
used
has
an
input
capacitance
<
10
n
F
(
C
ISS
)
.
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