參數(shù)資料
型號: MIG75J201H
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁數(shù): 3/8頁
文件大?。?/td> 217K
代理商: MIG75J201H
MIG75J201H
2001-05-29
3
b.
Brake Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
T
j
= 25°C
1
Collector cut-off current
I
CEX
V
CE
= 600V
T
j
= 125°C
20
mA
T
j
= 25°C
1.7
2.7
Collector-emitter saturation voltage
V
CE
(sat)
V
D
= 15 V, I
C
= 30 A
V
IN
= 15 V
0 V
T
j
= 125°C
1.6
V
T
j
= 25°C
1
Reverse current
I
R
V
R
= 600 V
T
j
= 125°C
20
mA
Forward voltage
V
F
I
F
= 30A
2.0
2.5
V
t
on
0.9
2.0
t
off
1.7
3.0
t
f
0.25
0.5
Switching time
t
rr
V
CC
= 300 V, I
C
= 30 A
V
D
= 15 V, V
IN
= 15 V
Inductive load
0 V
(Note 1)
0.15
0.3
μs
c.
Control Stage
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
High side
I
D (H)
8
Control circuit
current
Low side
I
D (L)
V
D
= 15 V
32
mA
Input-on signal voltage
V
IN (on)
V
D
= 15 V, I
C
= 75 mA
1.3
1.5
1.7
V
Input-off signal voltage
V
IN (off)
V
D
= 15 V, I
C
= 75 mA
2.2
2.5
2.8
V
Protection
I
FO (on)
8
10
12
Fault output
current
Normal
I
FO (off)
V
D
= 15 V
1
mA
Inverter
105
150
Over current
protection
trip level
Brake
OC
V
D
= 15 V, T
j
= 125°C
40
A
Inverter
157
225
Short circuit
protection
trip level
Brake
SC
V
D
= 15 V, T
j
= 125°C
60
A
Over current cut-off time
t
off (OC)
V
D
= 15 V
5
μs
Trip level
OT
110
118
125
Over
temperature
protection
Reset level
OTr
Case temperature
98
°C
Trip level
UV
11.0
12.0
12.5
Control supply
under voltage
protection
Reset level
UVr
12.5
V
Fault output pulse width
t
FO
V
D
= 15 V
1
2
3
ms
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