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參數(shù)資料
| 型號： | MIG75J201H |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 217K |
| 代理商： | MIG75J201H |
MIG75J201H
2001-05-29
4
d.
Thermal Resistance
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Inverter IGBT stage
―
―
0.553
Inverter FRD stage
―
―
1.000
Brake IGBT stage
―
―
1.562
Junction to case thermal
resistance
R
th (j-c)
Brake FRD stage
―
―
2.000
°C / W
Case to fin thermal
resistance
R
th (c-f)
Compound is applied
―
0.05
―
°C / W
Note 1: Switching time test circuit & timing chart
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