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參數(shù)資料
| 型號： | MIL-PRF-19500 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
| 中文描述： | 半導(dǎo)體器件，晶體管，npn型，硅，低功耗類型2N2484，2N2484UA，2N2484UB 1月，JANTX，JANTXV，揚(yáng)斯，JANHC和JANKC |
| 文件頁數(shù)： | 9/19頁 |
| 文件大小： | 113K |
| 代理商： | MIL-PRF-19500 |
MIL-PRF-19500/376E
9
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table
IV
of MIL-PRF-
19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance (see 4.3.2)
Thermal impedance (see 4.3.2)
9
I
CBO2
, h
FE4
Not applicable
10
48 hours minimum
48 hours minimum
11
I
CBO2
; h
FE4
;
I
CBO2
= 100% of initial value or 2 nA dc,
whichever is greater.
h
FE4
=
±
15%
See 4.3.1
240 hours minimum
Subgroups 2 and 3 of table I herein;
I
CBO2
= 100% of initial value or 2 nA dc,
whichever is greater;
h
FE4
=
±
15%
I
CBO2
,h
FE4
12
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
I
CBO2
= 100% of initial value or 2 nA
dc, whichever is greater;
h
FE4
=
±
25%
13
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: V
CB
= 10 to 30 V dc:
Power shall be applied to achieve T
J
= 135
°
C minimum and a minimum power dissipation = 75 percent of
maximum rated P
T
(see 1.3). T
A
= room ambient as defined in 4.5 of MIL-STD-750.
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.2 Thermal impedance (Z
θ
JX
measurements). The Z
θ
JX
measurements shall be performed in accordance
with method 3131 of MIL-STD-750.
a. I
M
measurement current -------------5 mA.
b. I
H
forward heating current -----------50 mA (min).
c. t
H
heating time -------------------------25 - 30 ms.
d. t
md
measurement delay time ------60
μ
s max.
e. V
CE
collector-emitter voltage ------10 V dc minimum.
The maximum limit for Z
θ
JX
under these test conditions are Z
θ
JX
(max) = 150
°
C/W for 2N2484, Z
θ
JX
(max) = 67
°
C/W
for 2N2484UA and 2N2484UB.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIL-PRF-19500/296 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:P-CHANNEL J-FET |
| MIL-PRF-19500/356 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:5 WATT GLASS ZENER DIODES |
| MIL-PRF-19500/564 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| MIL-PRF-19500/592 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET SURFACE MOUNT(SMD-1) |
| MIL-PRF-19500/655 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
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