參數(shù)資料
型號(hào): MJ10000
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS
中文描述: 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 2/8頁
文件大?。?/td> 212K
代理商: MJ10000
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (2)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage (Table 1)
Collector–Emitter Sustaining Voltage (Table 1, Figure 12)
VCEO(sus)
VCEX(sus)
Vdc
Vdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
MJ10000
Collector Cutoff Current
ICER
0.25
5
mAdc
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc, TC = 100 C)
VCE(sat)
40
400
1.9
2
Vdc
(IC = 10 Adc, IB = 400 mAdc)
2.5
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
IB1 = 400 mA, VBE(off) = 5 Vdc, tp = 50
μ
s,
Fall Time
tr
0.12
0.20
1.1
0.2
0.6
2.4
s
μ
s
μ
s
Crossover Time
VBE(off) = 5 Vdc, TC = 100 C)
Storage Time
tc
tsv
1.5
1.0
3.7
μ
s
μ
s
(1)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2%.
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