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參數資料
| 型號： | MJ10007 |
| 廠商： | 永盛國際集團 |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩(wěn)壓器 |
| 文件頁數： | 5/8頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MJ10007 |
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
(continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
In general, trv + tfi
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
tc. However, at lower test currents this
1
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.1
0.07
0.01
0.3
10
0.03
0.02
0.1
2
td
tr
0.2
3
0.05
5
Figure 9. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t
μ
2
0.07
0.05
VBE(off) = 5 V
VCC = 250 V
IB1 = 250 mA
TJ = 25
°
C
tf
ts
0.3
0.2
0.5
VCC = 250 V
IB1 = 250 mA
TJ = 25
°
C
3
0.1
0.7
0.5
0.2
0.3
5
7
1
0.7
0.5
0.3
10
0.1
2
0.2
3
5
7
1
0.7
0.5
0.7
1
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r
T
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θ
JC = r(t)
θ
JC
R
θ
JC = 1.17
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.02
0.1
0.01
0.3
3.0
30
300
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ10007 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10008 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
| MJ10009 | 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 制造商:NTE Electronics 功能描述:NPN TRANSISTOR 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
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