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參數(shù)資料
| 型號： | MJ10007 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 228K |
| 代理商： | MJ10007 |
1
Motorola Bipolar Power Transistor Device Data
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The MJ10007 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
30 ns Inductive Fall Time — 25 C (Typ)
500 ns Inductive Storage Time — 25 C (Typ)
Operating Temperature Range –65 to +200 C
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Leakage Currents
ICM
IB
— Peak (1)
20
Base Current — Continuous
2.5
Adc
Derate above 25 C
0.86
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +200
W/ C
C
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
Max
1.17
Unit
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
275
C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10007/D
10 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 VOLTS
150 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
≈
100
≈
15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ10007 | POWER TRANSISTORS(10A,350-400V,150W) |
| MJ10009 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS |
| MJ10009 | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
| MJ10009 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJ10009 | NPN SILICON POWER DARLINGTON TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10007 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10008 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
| MJ10009 | 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 制造商:NTE Electronics 功能描述:NPN TRANSISTOR 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
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