參數(shù)資料
型號(hào)： MJ10007
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： NPN SILICON POWER DARLINGTON TRANSISTORS
中文描述： 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： TO-3, 2 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 228K
代理商： MJ10007
3
Motorola Bipolar Power Transistor Device Data
V
V
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
3
0.2
0.3
1
2
3
100
70
50
Figure 2. Collector Saturation Region
3.4
IB, BASE CURRENT (mA)
0.6
10
20
70
100
300
700
1 k
2.6
2.2
1.8
1.4
IC = 0.3 A
TJ = 25
°
C
10 A
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
103
102
101
h
TJ = 150
°
C
VCE = 5 V
,
I
100
0
+0.2
–0.2
VCE = 250 V
TJ = 125
°
C
100
°
C
25
°
C
30
20
10
7
5
0.5 0.7
5
7
Figure 3. Collector-Emitter Saturation Voltage
2.4
0.1
IC, COLLECTOR CURRENT (AMP)
0.4
0.3
0.5
0.7
1
2
5
2
1.6
1.2
0.8
IC/IB = 10
TJ = – 55
°
C
7
3
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
0.2 0.3
0.5
0.7
2.4
2
1.6
1.2
0.1
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
1
2
20
10
0.2
100
80
60
TJ = 25
°
C
Cob
400
200
100 200
1000
25
°
C
–55
°
C
200
300
10
5 A
2.5 A
30
500
200
50
V
10
25
°
C
150
°
C
2
5
7
3
10
1
25
°
C
150
°
C
25
°
C
TJ = – 55
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 5 V
75
°
C
μ
10–1
+0.4
+0.8
+0.6
5
50
C
REVERSE
FORWARD
0.1
3
1
V
0.2
0.1
500
0.5
TYPICAL CHARACTERISTICS
相關(guān)PDF資料
PDF描述
MJ10007 POWER TRANSISTORS(10A,350-400V,150W)
MJ10009 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
MJ10009 SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
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MJ10009 NPN SILICON POWER DARLINGTON TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10007 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
MJ10008 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor
MJ10009 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 制造商:NTE Electronics 功能描述:NPN TRANSISTOR 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10009 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW
MJ1000F 制造商:Ohmite Mfg Co 功能描述:
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