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參數(shù)資料
| 型號： | MJ10009 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(20A,400-500V,175W) |
| 中文描述： | 功率晶體管（20A條,400 - 500V及175W的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MJ10009 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(IC = 2 A, Vclamp = Rated VCEX, TC = 100 C, VBE(off) = 5 V)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150 C)
ICEV
500
—
—
mAdc
(VCE = Rated VCEV, RBE = 50
, TC = 100 C)
—
—
5
Emitter Cutoff Current
IEBO
—
—
175
mAdc
(IC = 5 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 500 mAdc, TC = 100 C)
VCE(sat)
40
30
—
—
400
300
Vdc
Base–Emitter Saturation Voltage
VBE(sat)
—
—
2.5
Vdc
(IF = 10 Adc)
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
hfe
—
—
—
8
(VCC = 250 Vdc, IC = 10 A,
IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25
s
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300
μ
s, Duty Cycle
≤
2%.
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|---|---|
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