- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371112 > MJ10009 (MOSPEC SEMICONDUCTOR CORP.) POWER TRANSISTORS(20A,400-500V,175W) PDF資料下載
參數(shù)資料
| 型號： | MJ10009 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(20A,400-500V,175W) |
| 中文描述： | 功率晶體管（20A條,400 - 500V及175W的） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MJ10009 |
4
Motorola Bipolar Power Transistor Device Data
IC(pk)
t
t1
tf
t
IC
VCE
T
C
V
I
C
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180
μ
H
Rcoil = 0.05
VCC = 20 V
Vclamp = Rated VCEX Value
VCC = 250 V
RL = 25
Pulse Width = 25
μ
s
t2
TIME
tf CLAMPED
VCE or
Vclamp
tf UNCLAMPED
t2
20
1
0
PW Varied to Attain
IC = 100 mA
2
DRIVER SCHEMATIC
INDUCTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
Lcoil (ICpk)
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
For inductive loads pulse width
is adjusted to obtain specified IC
+
10
μ
F
0.05
μ
F
1
2
HP214
– 38 V
PG
IN
50
10
1000
0.005
μ
F
10
2.0
μ
F
2N3762
10
100
+ V DRIVE
RB
0.005
MTP3055E
50
MTP3055E
– Voff
DRIVE
–
+
–
IB1 adjusted to
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
IB1
1
2
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
1
2
TUT
RL
VCC
t1
≈
VCC
t2
≈
Lcoil (ICpk)
VClamp
Table 1. Test Conditions for Dynamic Performance
90% VCEM
IC
90% ICM
tfi
ICM
VCEM
tc
90% IB1
VCE
IB
10% VCEM
10%
ICM
2% IC
tsv
trv
tti
Figure 7. Inductive Switching Measurements
TIME
Vclamp
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage wa-
veforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ1000 | Medium-Power Complementary Silicon Transistors |
| MJ1001 | Medium-Power Complementary Silicon Transistors |
| MJ10012 | 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS |
| MJ10012 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10012 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ1000FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 100 Ohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ1000FE-R52 | 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 100 Ohm 1% 200 Volt |
| MJ1001 | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。