參數(shù)資料
型號： MJ10012
廠商： 永盛國際集團(tuán)
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁數(shù)： 3/6頁
文件大小： 191K
代理商： MJ10012
3
Motorola Bipolar Power Transistor Device Data
,
I
μ
V
V
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005
0.01
0.02
0.05
1
2
2.5
2
1.5
1
TJ = 25
°
C
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Cutoff Region
103
102
101
100
10–1
IC = ICES
25
°
C
REVERSE
–0.2
FORWARD
Figure 5. Collector–Emitter Saturation Voltage
2.2
IC, COLLECTOR CURRENT (AMP)
0.20.1
1.8
1.4
1
0.6
Figure 6. Base–Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
2.4
2
1.6
1.2
IC = 0.5 A
10 A
3
IC/IB = 5
– 30
°
C
25
°
C
150
°
C
25
°
C
TJ = – 30
°
C
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 6 V
0.1
0.3
0.5
0.7
1
2
5
7
3
10
VCE = 250 V
TJ = 150
°
C
75
°
C
0
+0.2
+0.4
+0.8
+0.6
6
0.2
0.1
0.5
TJ = 150
°
C
V
V
1
2
0.3
5
7
10
0.2
3
0.7
0.5
0.2
10
7
5
Figure 7. Turn–Off Switching Time
IC, COLLECTOR CURRENT (AMP)
3
2
1
0.5
0.1
0.5 0.7
TJ = 25
°
C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
t
μ
tf
ts
0.2
0.3
1
2
5
7
3
10
20
0.7
2000
0.1
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
2
3
5
10
700
500
100
70
50
30
h
TJ = 150
°
C
25
°
C
30
°
C
VCE = 3 Vdc
VCE = 6 Vdc
200
300
1000
7
25
°
C
相關(guān)PDF資料
PDF描述
MJH10012 POWER TRANSISTORS DARLINGTON NPN SILICON
MJ10012 POWER TRANSISTORS DARLINGTON NPN SILICON
MJ10012 POWER TRANSISTORS(10A,400V,175W)
MJ10015 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
MJ10016 NPN SILICON POWER DARLINGTON TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10012 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR
MJ10013 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W)
MJ10014 制造商:undefined 功能描述:
MJ10015 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10015 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
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