參數(shù)資料
型號: MJ10012
廠商: 永盛國際集團(tuán)
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 4/6頁
文件大?。?/td> 191K
代理商: MJ10012
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.5
0.2
0.1
0.07
0.05
0.03
0.02
0.01
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC =
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
r
R
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
2,000
500
0.7
0.3
1,000
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5
2
1
0.2
0.1
0.005
50
70 100
200
500
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
300
0.01
I
MJH10012
TC = 25
°
C
MJ10012
dc
5.0 ms
1.0 ms
100
μ
s
10
20
30
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25 C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
Figure 11. Power Derating
Figure 12. Usage Test Circuit
t1 to be selected such that IC reaches 6 Adc before switch-off.
NOTE: “Usage Test,” Figure 12 specifies energy handling
capabilities in an automotive ignition circuit.
100
80
60
20
0
0
40
80
120
200
TC, CASE TEMPERATURE (
°
C)
P
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
MJH10012
MJ10012
20
1.5
10 mH
STANCORE
C2688
VZ = 400 V
T.U.T.
0.3
μ
F
10 Vdc
VCC = 12 Vdc
0 Vdc
t1
5 ms
220
1N4933
2N5881
27
相關(guān)PDF資料
PDF描述
MJH10012 POWER TRANSISTORS DARLINGTON NPN SILICON
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