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參數(shù)資料
| 型號(hào)： | MJ11032 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| 中文描述： | 50 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 197A-05, TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | MJ11032 |
2
Motorola Bipolar Power Transistor Device Data
(IC = 1 00 mAdc, IB = 0)
(VCE = 60 Vdc, RBE = 1 k ohm)
(VCE = 90 Vdc, RBE = 1 k ohm)
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150 C)
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150 C)
ON CHARACTERISTICS (1)
DC Current Gain
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
MJ11030, MJ11031
90
—
MJ11028, MJ11029
MJ11030, MJ11031
MJ11028, MJ11029
MJ11030, MJ11031
—
—
—
—
2
2
10
2
mAdc
hFE
—
VCE(sat)
400
—
Vdc
—
3.0
I
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
0.5
1
2
5
10
20
50
200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11030, 31
MJ11032, 33
100
There are two limitations on the power–handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by se-
cond breakdown.
V
IC, COLLECTOR CURRENT (AMP)
h
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
1
2
5
10
100
20
50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25
°
C
1 k
200
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
5
4
3
2
1
1
2
5
10
100
20
50
0
3
TJ = 25
°
C
IC/IB = 100
VBE(sat)
80
μ
s
(PULSED)
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
80
μ
s
(PULSED)
VCE(sat)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ11030 | 4 Pin, MFP, Pin Pitch 1.27mm, Photdarlington Detector, CTR 600 min @ 1mA, 2V Optocoupler |
| MJ11028 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11028 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
| MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ11032 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11032G | 功能描述:達(dá)林頓晶體管 50A 120V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11032G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MJ11033 | 功能描述:達(dá)林頓晶體管 50A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11033 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
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