參數(shù)資料
型號(hào): MJ13333
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
中文描述: 20 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 278K
代理商: MJ13333
1
Motorola Bipolar Power Transistor Device Data
The MJ13333 transistor is designed for high voltage, high–speed, power switching
in inductive circuits where fall time is critical. It is particularly suited for line operated
switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn Off Times
200 ns Inductive Fall Time — 25 C (Typ)
1.8
μ
s Inductive Storage Time — 25 C (Typ)
Operating Temperature Range –65 to +200 C
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Leakage Currents
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VCEV
VEB
IC
Value
400
Unit
Vdc
Collector–Emitter voltage
700
Vdc
Emitter Base Voltage
6.0
Vdc
Collector Current — Continuous
20
Adc
@ TC = 100 C
100
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
Max
1.0
Unit
C/W
(1)
Similar device types available with lower VCEO ratings, see the MJ13330 (200 V) and MJ13331 (250 V).
C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ13333/D
20 AMPERE
NPN SILICON
POWER TRANSISTORS
400–500 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 1
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