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參數(shù)資料
| 型號(hào)： | MJ13333 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS |
| 中文描述： | 20 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 278K |
| 代理商： | MJ13333 |
5
Motorola Bipolar Power Transistor Device Data
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
I
C
C
V
T
20
1
0
PW Varied to Attain
IC = 100 mA
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7
Lcoil = 180
μ
H
Rcoil = 0.05
VCC = 20 V
VCC = 250 V
RL = 50
Pulse Width = 10
μ
s
INDUCTIVE TEST CIRCUIT
TURN–ON TIME
IB1 adjusted to
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
t1 Adjusted to
Obtain IC
Lcoil (ICpk)
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
2
IB1
1
2
Vclamp = 250 V
RB adjusted to attain desired IB1
+10 V
250
μ
F
15 V
0
50
100
330
430
39
250
μ
F
–5.2
1
2
R2
5.1
5 W
47
470
2 W
+15 V
R1
All Diodes — 1N4934
All NPN — MJE200
All PNP — MJE210
Adjust R1 to obtain IB1
For switching and RBSOA, R2 = 0
For VCEO(sus), R2 =
∞
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
t1
IC
VCE
IC(pk)
tf Clamped
t
tf
t
t2
TIME
VCE or
Vclamp
1
2
TUT
RL
VCC
t1
≈
VCC
t2
≈
Lcoil (ICpk)
VClamp
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1
2
3
10
20
50
100
200 300
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1
0.5
0.2
R
500
1000
0.7
0.3
0.03
0.02 0.03
0.3
5
30
Figure 11. Thermal Response
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