參數(shù)資料
型號(hào): MJ15015
廠商: Boca Semiconductor Corp.
英文描述: COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片大功率晶體管
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 235K
代理商: MJ15015
3
Motorola Bipolar Power Transistor Device Data
V
Figure 2. DC Current Gain
200
0.2
IC, COLLECTOR CURRENT (AMP)
2
0.30.5
0.7
1
2
3
5
7
15
70
50
30
20
10
7
5
100
h
TJ = 150
°
C
25
°
C
–55
°
C
VCE = 4.0 V
3
10
Figure 3. Collector Saturation Region
2.8
0.005
IB, BASE CURRENT (AMP)
0
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
2
1.6
0.8
0.4
IC = 1 A
TJ = 25
°
C
4 A
2.4
1.2
8 A
f
T
3.5
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
0.3
0.5 0.7
1
2
3
5
7
20
2.5
1.5
1
0.5
0
TC = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
3
2
10
VBE(on) @ VCE = 4 V
10
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Current–Gain — Bandwidth Product
0.2
0.3
0.5
1.0
2.0
5.0
2.0
1.0
MJ2955A
MJ15016
2N3055A
MJ15015
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
+13 V
25
μ
s
0
–11 V
30
–5 V
1N6073
SCOPE
VCC
+30 V
7.5
tr, tf
10 ns
DUTY CYCLE = 1.0%
10
7
5
0.2
Figure 7. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
3
2
1
0.7
0.5
0.1
0.3
0.5
0.7
1
2
3
7
15
VCC = 30 V
IC/IB = 10
TJ = 25
°
C
0.3
0.2
5
10
tr
td
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