參數資料
型號: MJ15015
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(15A)
中文描述: 功率晶體管(15A條)
文件頁數: 4/6頁
文件大?。?/td> 235K
代理商: MJ15015
4
Motorola Bipolar Power Transistor Device Data
10
7
5
0.2
Figure 8. Turn–Off Times
IC, COLLECTOR CURRENT (AMPS)
3
2
0.1
0.5
0.1
0.3
0.5
0.7
1
3
5
15
VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
0.3
0.2
t
μ
tf
ts
2
0.7
7
10
400
1.0
Figure 9. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
20
20
50
100
200
500 1000
2.0
5.0
10
C 250
100
30
TJ = 25
°
C
Cib
Cob
2N3055A
MJ15015
MJ2955A
MJ15016
COLLECTOR CUT–OFF REGION
10,000
+0.2
Figure 10. 2N3055A, MJ15015
VBE, BASE–EMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
,
I
μ
0.1
0.01
+0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
IC = ICES
NPN
1000
–0.2
Figure 11. MJ2955A, MJ15016
VBE, BASE–EMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
,
I
μ
0.01
0.001
–0.1
0
+0.1
+0.2
+0.3
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
IC = ICES
PNP
+0.4
+0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A, MJ2955A
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5
1
10
20
100
60
2
I
dc
30
μ
s
1 ms
100
μ
s
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
0.215
20
100
60
2.0
I
dc
0.1 ms
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30
120
1.0 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe Operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25 C;
TJ(pk) is variable depending on power level. Second break-
down pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
相關PDF資料
PDF描述
MJ15016 POWER TRANSISTORS(15A)
MJ2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS
MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS
MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS
MJ2955 PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
相關代理商/技術參數
參數描述
MJ15015G 功能描述:兩極晶體管 - BJT 15A 120V 180W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15016 功能描述:兩極晶體管 - BJT 15A 120V 180W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15016G 功能描述:兩極晶體管 - BJT 15A 120V 180W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15018 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS
MJ15019 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS