參數(shù)資料
型號: MJ2955
廠商: 意法半導體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補性的芯片功率晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 130K
代理商: MJ2955
1
Motorola Bipolar Power Transistor Device Data
. . . designed for general–purpose switching and amplifier applications.
DC Current Gain — hFE = 20–70 @ IC = 4 Adc
Collector–Emitter Saturation Voltage —
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
THERMAL CHARACTERISTICS
Collector–Emitter Voltage
VCER
70
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
115
VEB
Watts
7
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
7
Adc
Operating and Storage Junction Temperature
TJ, Tstg
–65 to +200
C
Characteristic
Symbol
Max
Unit
160
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
P 120
120
100
80
60
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055/D
CASE 1–07
TO–204AA
(TO–3)
*Motorola Preferred Device
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
115 WATTS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ2955 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-3
MJ2955A 制造商:BOCA 制造商全稱:Boca Semiconductor Corporation 功能描述:COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
MJ2955G 功能描述:兩極晶體管 - BJT 15A 60V 115W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ2955RCA 制造商:RCA 功能描述:2955 RCA LOC: S3C5C
MJ2CRYSTALS 制造商:EUROQUARTZ 制造商全稱:EUROQUARTZ limited 功能描述:Miniature size: 5.0mm x 3.2mm x 0.9mm height