參數(shù)資料
型號: MJ2955
廠商: 意法半導體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補性的芯片功率晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 130K
代理商: MJ2955
2
Motorola Bipolar Power Transistor Device Data
* Indicates Within JEDEC Registration. (2N3055)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
(IC = 200 mAdc, IB = 0)
(IC = 200 mAdc, RBE = 100 Ohms)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150 C)
(VCE = 30 Vdc, IB = 0)
0.7
Collector Cutoff Current
ICEX
1.0
mAdc
(VBE = 7.0 Vdc, IC = 0)
VCE(sat)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
20
70
3.0
Vdc
(IC = 10 Adc, IB = 3.3 Adc)
Collector–Emitter Saturation Voltage
SECOND BREAKDOWN
(IC = 4.0 Adc, VCE = 4.0 Vdc)
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)
2.87
Adc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
fT
2.5
MHz
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)
20
6
Figure 2. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
6
4
2
1
0.6
0.4
0.2
10
20
40
60
2N3055, MJ2955
I
dc
500
μ
s
1 ms
250
μ
s
50
μ
s
BONDING WIRE LIMIT
THERMALLY LIMITED @ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated for
temperature according to Figure 1.
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