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參數(shù)資料
| 型號： | MJD112-001 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Darlington Power Transistors |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 306K |
| 代理商： | MJD112-001 |
3
Motorola Bipolar Power Transistor Device Data
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
T
0.7
0.5
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.01
I
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.3
0.2
100
5
3
2
0.5
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
20
3
TJ = 150
°
C
CURVES APPLY BELOW RATED VCEO
100
μ
s
1 ms
dc
0.1
1
7
10
10
7
30
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
TA
SURFACE
MOUNT
TC
0.7
5 ms
50
70
200
500
μ
s
ACTIVE–REGION SAFE–OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150 C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
C
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25
°
C
200
10
50
70
100
0.1
2
6
20
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112RL | Complementary Darlington Power Transistors |
| MJD112T4 | Complementary Darlington Power Transistors |
| MJD112T4G | Complementary Darlington Power Transistors |
| MJD112 | NEUTRAL LINK KIT, FG-B; RoHS Compliant: NA |
| MJD1121 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD1121 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
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