參數(shù)資料
型號(hào)： MJD112
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： NEUTRAL LINK KIT, FG-B; RoHS Compliant: NA
中文描述： 2 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 306K
代理商： MJD112
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Surface Mount Replacements for TIP110–TIP117 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
MAXIMUM RATINGS
MJD112
MJD117
Collector Current — Continuous
2
Adc
Derate above 25 C
1.75
0.014
Watts
W/ C
R
Thermal Resistance, Junction to Ambient*
71.4
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
ICEO
—
20
μ
Adc
Collector Cutoff Current
ICBO
—
20
μ
Adc
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD112/D
CASE 369A–13
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關(guān)PDF資料
PDF描述
MJD1121 SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
MJD112T4 SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
MJD112 D-PAK for Surface Mount Applications
MJD112 EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
MJD112L EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD112_03 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112_06 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor
MJD112_10 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:Complementary power Darlington transistors
MJD112_11 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Darlington Power Transistors
MJD112-001 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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