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參數(shù)資料
| 型號： | MJD112I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MJD112I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD112
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
2
A
ICP
Collector Current (Pulse)
4
A
IB
Base Current
50
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
V
ICEO
Collector Cut-off Current
VCE = 50V, IB = 0
20
A
ICBO
Collector Cut-off Current
VCB = 100V, IB = 0
20
A
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
* DC Current Gain
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
500
1000
200
12K
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
2
3
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 4A, IB = 40mA
4
V
VBE(on)
* Base-Emitter ON Voltage
VCE = 3A, IC = 2A
2.8
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.75A
25
MHz
Cob
Output Capacitance
VCB = 10V, IE = 0
f = 0.1MHz
100
pF
MJD112
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP112
1.Base
2.Collector
3.Emitter
R110k
R20.6k
Equivalent Circuit
B
E
C
R1
R2
D-PAK
I-PAK
11
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| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD112RL | 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112RLG | 功能描述:達林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112T4 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112T4 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR NPN 100V TO-252 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 100V, TO-252 |
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