參數(shù)資料
型號(hào): MJD122
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: Complementary Darlington Power Transistors
中文描述: 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 284K
代理商: MJD122
8
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MJD122/D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD122_05 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:nullLow voltage power Darlington transistor
MJD122_09 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor
MJD122_11 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122-1 功能描述:達(dá)林頓晶體管 NPN PWR Darlington Int Anti Collector RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel