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參數(shù)資料
| 型號： | MJD122T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| 中文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 284K |
| 代理商： | MJD122T4 |
5
Motorola Bipolar Power Transistor Device Data
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
T
0.7
0.5
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.5
3
0.3
0.2
0.7
1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
°
C
t
μ
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit
Figure 10. Switching Times
0.1
0.07
0.05
1
10
7
5
2
Figure 11. Thermal Response
V2
APPROX
+8 V
0
≈
8 k
SCOPE
VCC
–30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
μ
s
tr, tf
≤
10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
V1
APPROX
–12 V
TUT
RB
D1
≈
120
0.1
0.01
I
5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.3
0.2
100
5
3
2
0.5
BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
10
50
7
TJ = 150
°
C
100
μ
s
1 ms
dc
0.1
1
15
10
20
30
20
70
5 ms
Figure 12. Maximum Forward Bias
Safe Operating rea
3
2
1
0.05
0.03
0.02
500
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Fig-
ure 11. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD122T4G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
| MJD122T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252 |
| MJD122TF | 功能描述:達林頓晶體管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD122-TP | 功能描述:TRANS NPN 100V 8A DPAK RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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