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參數(shù)資料
| 型號： | MJD127 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Darlington Power Transistors |
| 中文描述： | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MJD127 |
1/8
August 2002
MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
I
STMicroelectronics PREFERRED SALESTYPES
I
LOW BASE-DRIVE REQUIREMENTS
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
I
THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”)
I
SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
I
ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
APPLICATIONS:
I
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epitaxial Base technology for cost-effective
performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
For PNP types voltage and current values are negative.
Ordering
Code
Marking
Package
Shipment
MJD122T4
MJD122-1
MJD127T4
MJD127-1
MJD122
MJD122
MJD127
MJD127
TO-252 (DPAK)
TO-251 (IPAK)
TO-252 (DPAK)
TO-251 (IPAK)
Tape & Reel
Tube
Tape & Reel
Tube
Parameter
Value
MJD122
MJD127
100
Unit
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
V
100
V
5
V
Collector Current
5
A
Collector Peak Current (t
p
< 5 ms)
8
A
Base Current
Total Dissipation at T
c
= 25
°
C
0.1
A
20
W
Storage Temperature
–65 to 150
°
C
°
C
T
j
Max. Operating Junction Temperature
150
3
2
1
1
3
TO-252
DPAK
(Suffix ”T4”)
TO-251
IPAK
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
R
2
Typ. = 150
相關PDF資料 |
PDF描述 |
|---|---|
| MJD127 | D-PAK for Surface Mount Applications |
| MJD127 | PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS) |
| MJD47 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJD47 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD47T4 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD127/TEST/LH | 制造商:ON Semiconductor 功能描述:TRANS DARLINGTON PNP 100V 8A 3PIN DPAK - Virtual or Non-Physical Inventory (Software & Literature) |
| MJD127-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD127G | 功能描述:達林頓晶體管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD127T4 | 功能描述:達林頓晶體管 PNP Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD127T4G | 功能描述:達林頓晶體管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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