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參數資料
| 型號： | MJD127 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Darlington Power Transistors |
| 中文描述： | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 8/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | MJD127 |
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
8/8
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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相關PDF資料 |
PDF描述 |
|---|---|
| MJD127 | D-PAK for Surface Mount Applications |
| MJD127 | PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS) |
| MJD47 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJD47 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD47T4 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD127/TEST/LH | 制造商:ON Semiconductor 功能描述:TRANS DARLINGTON PNP 100V 8A 3PIN DPAK - Virtual or Non-Physical Inventory (Software & Literature) |
| MJD127-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD127G | 功能描述:達林頓晶體管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD127T4 | 功能描述:達林頓晶體管 PNP Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD127T4G | 功能描述:達林頓晶體管 8A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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