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參數(shù)資料
| 型號： | MJD253 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor(互補(bǔ)型功率晶體管) |
| 中文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 97K |
| 代理商： | MJD253 |
MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
3
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
15
10
T
C
5
20
P
2.5
0
1.5
1
T
A
0.5
2
T
C
T
A
(SURFACE MOUNT)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
10
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
100
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
500 s
dc
1
1ms
50
20
10
5
2
1
100 s
I
0.02
0.05
0.2
0.5
5ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150
°
C; T
C
is variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in Figure 3. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
t, TIME (ms)
0.01
0.02
0.05
1
2
5
10
20
50
100
200
0.1
0.5
0.2
1
0.2
0.1
0.07
0.05
r
R
JC
(t) = r(t)
JC
R
JC
= 10
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
R 0.5
0.03
0.02
D = 0.5
0.05
0.3
0.7
0 (SINGLE PULSE)
Figure 3. Thermal Response
0.1
0.02
0.01
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD253-001 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
| MJD253-1G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253T4 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253T4G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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