型號(hào): | MJD2955 |
廠商: | 意法半導(dǎo)體 |
英文描述: | COMPLEMENTARY SILICON POWER TRANSISTORS |
中文描述: | 互補(bǔ)性的芯片功率晶體管 |
文件頁數(shù): | 2/6頁 |
文件大小: | 202K |
代理商: | MJD2955 |
相關(guān)PDF資料 |
PDF描述 |
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MJD3055 | Complementary Power Transistors |
MJD2955 | Complementary Power Transistors |
MJD2955-1 | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
MJD3055 | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
MJD3055-1 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:12; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MJD2955_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY POWER TRANSISTORS |
MJD2955_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications |
MJD2955_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
MJD2955-001 | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
MJD2955-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications |