參數(shù)資料
型號(hào): MJD2955
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片功率晶體管
文件頁數(shù): 2/6頁
文件大小: 202K
代理商: MJD2955
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
VCEO(sus)
60
Vdc
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150 C)
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
2
0.02
mAdc
(IC = 10 Adc, VCE = 4 Vdc)
Collector–Emitter Saturation Voltage (1)
(IC = 4 Adc, IB = 0.4 Adc)
5
1.1
Vdc
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
MJD3055 Complementary Power Transistors
MJD2955 Complementary Power Transistors
MJD2955-1 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:12; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
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